丝印：PQ；Package：X1SON；ESD701 Low Capacitance ESD Diode for RF and ADAS Signal Protection

1 Features • IEC 61000-4-2 ESD Protection: – ±15kV contact discharge – ±15kV air gap discharge • IEC 61000-4-5 surge protection: – 3A (8/20μs) • I/O capacitance: 0.3pF (typical) • Ultra low leakage current: 2nA (typical) • Low dynamic resistance 0.84Ω (typical) • Industry standard 0402 pa

文件：1.24178 Mbytes 页数：16 Pages

TI

德州仪器

丝印：PS；Package：X1SON；ESD701-Q1 Automotive Low Capacitance ESD Diode for RF and ADAS Signal Protection

1 Features • AEC-Q101 Qualified • IEC 61000-4-2 ESD Protection: – ±15kV contact discharge – ±15kV air gap discharge • ISO 10605 (330pF, 330Ω) ESD Protection: – ±12kV contact discharge – ±12kV air gap discharge • IEC 61000-4-5 surge protection: – 3A (8/20μs) • I/O capacitance: 0.3pF (typi

文件：1.24538 Mbytes 页数：16 Pages

TI

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I-Line Bi-directional TVS Diode

Features © Low operating voltage: +24V @ Ultra low capacitance:0.3pF typical © Ultra low leakage: nA level ® Low operating voltage: ® Low clamping voltage ® 2-pin leadless package ® Complies with following standards: ® — IEC 61000-4-2 (ESD) immunity test Air discharge: £20

文件：1.19962 Mbytes 页数：4 Pages

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70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, hig

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PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

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