isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=36A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.09Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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无锡固电

Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

VDSS = -100V RDS(on) = 0.20Ω ID = -14A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t

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IRF

8 CHANNEL LINEAR ARRAY MULTIANODE PMT ASSEMBLY

Photomultiplier Tube with Active Divider Circuit Linear Array Multianode PMT Assembly, 8-Channel(H9530 series) / 16-Channel(H10515B series) / 32-Channel(H7260 series) FEATURES ● High Cathode Sensitivity Luminous 500 µA/lm Typ. (-20 Type) ● Effective Area per Channel H9530 Seri

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HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

P-Channel MOSFET Transistor

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ISC

无锡固电