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AORN1001BTF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES •Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) •Standard8pincount(0.150narrowbody) JEDEC®MS-012 •Ruggedmoldedcaseconstruction •Excellentlongtermratiostability (ΔR±0.015) •LowTCRtracking±5ppm/°C •Passessulfurresistancet

VishayVishay Siliconix

威世科技

AORN1001BTS

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES •Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) •Standard8pincount(0.150narrowbody) JEDEC®MS-012 •Ruggedmoldedcaseconstruction •Excellentlongtermratiostability (ΔR±0.015) •LowTCRtracking±5ppm/°C •Passessulfurresistancet

VishayVishay Siliconix

威世科技

AORN1001BUF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES •Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) •Standard8pincount(0.150narrowbody) JEDEC®MS-012 •Ruggedmoldedcaseconstruction •Excellentlongtermratiostability (ΔR±0.015) •LowTCRtracking±5ppm/°C •Passessulfurresistancet

VishayVishay Siliconix

威世科技

AORN1001CTF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES •Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) •Standard8pincount(0.150narrowbody) JEDEC®MS-012 •Ruggedmoldedcaseconstruction •Excellentlongtermratiostability (ΔR±0.015) •LowTCRtracking±5ppm/°C •Passessulfurresistancet

VishayVishay Siliconix

威世科技

AORN1001CTS

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES •Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) •Standard8pincount(0.150narrowbody) JEDEC®MS-012 •Ruggedmoldedcaseconstruction •Excellentlongtermratiostability (ΔR±0.015) •LowTCRtracking±5ppm/°C •Passessulfurresistancet

VishayVishay Siliconix

威世科技

AORN1001CUF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES •Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) •Standard8pincount(0.150narrowbody) JEDEC®MS-012 •Ruggedmoldedcaseconstruction •Excellentlongtermratiostability (ΔR±0.015) •LowTCRtracking±5ppm/°C •Passessulfurresistancet

VishayVishay Siliconix

威世科技

AP1001BSQ

Lead-FreePackage,LowConductanceLoss

Description TheAP1001BSQusedthelatestAPECPowerMOSFETsilicontechnologywiththeadvancedtechnologypackagingtoprovidetheloweston-resistanceloss,lowprofileanddualsidedcoolingcompatible. TheGreenFETTMpackageiscompatiblewithexistingsolderingtechniquesandisidealfor

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP1001-XXM

BobbintronElectricalCorporation

ETCList of Unclassifed Manufacturers

未分类制造商

APC1001J

AirPurificationComboONE

KeyFeatures&Benefits Calibratedsignaloutputsincompliance withinternationalstandards(PM1.0, PM2.5,PM10,TVOC,eCO2 1,AQI2, temperatureandrelativehumidity). Matchbox-size,fullyorchestrated designforspace-constrainedapplications andlowestoverallBOMcosts. Systemlevel

SCIOSENSESciosense B.V.

感奥艾半导体

APC1001U

AirPurificationComboONE

KeyFeatures&Benefits Calibratedsignaloutputsincompliance withinternationalstandards(PM1.0, PM2.5,PM10,TVOC,eCO2 1,AQI2, temperatureandrelativehumidity). Matchbox-size,fullyorchestrated designforspace-constrainedapplications andlowestoverallBOMcosts. Systemlevel

SCIOSENSESciosense B.V.

感奥艾半导体

APC1001U_EK

AirPurificationComboONE

KeyFeatures&Benefits Calibratedsignaloutputsincompliance withinternationalstandards(PM1.0, PM2.5,PM10,TVOC,eCO2 1,AQI2, temperatureandrelativehumidity). Matchbox-size,fullyorchestrated designforspace-constrainedapplications andlowestoverallBOMcosts. Systemlevel

SCIOSENSESciosense B.V.

感奥艾半导体

APL1001J

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV®SINGLEDIEISOTOP®PACKAGE

ADPOW

Advanced Power Technology

APL1001J

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APL1001P

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV®SINGLEDIEISOTOP®PACKAGE

ADPOW

Advanced Power Technology

APN1001

CircuitModelsforPlasticPackagedMicrowaveDiodes

Introduction Discrete,low-cost,surfacemountsemiconductordiodesareattractivechoicesforUHFandmicrowaveapplicationswherepackageparasiticmayhaveasignificantimpactonperformance.ThemostcommonpackagestylesaretheSOT-23andtheSOD-323(Figure1)whichwereneitherdesigne

SKYWORKSSkyworks Solutions Inc.

思佳讯美国思佳讯公司

APT1001

PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs

PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally

ADPOW

Advanced Power Technology

APT1001RAN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT1001RBLC

PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs

PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally

ADPOW

Advanced Power Technology

APT1001RBN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1001RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    ER1001AF

  • 制造商:

    PANJIT

  • 制造商全称:

    Pan Jit International Inc.

  • 功能描述:

    ISOLATION SUPERFAST RECOVERY RECTIFIERS

供应商型号品牌批号封装库存备注价格
PANJIT
17+
TO220F-2
6200
询价
23+
N/A
48800
正品授权货源可靠
询价
PANJIT
23+
TO-TO-220F
37650
全新原装真实库存含13点增值税票!
询价
PANJIT
23+
TO-220F
10000
公司只做原装正品
询价
PANJIT
22+
TO-220F
6000
十年配单,只做原装
询价
PANJIT
22+
ITO-220AC
23000
询价
PEC
23+
TO220F
54424
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
PANJIT
23+
ITO-220AB
2800
正品原装货价格低qq:2987726803
询价
PANJIT
22+
TO-220F
25000
只做原装进口现货,专注配单
询价
PANJIT-强茂
24+25+/26+27+
TO-220-3
57500
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多ER1001AF供应商 更新时间2024-5-16 8:53:00