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X, Ku Band Power GaAs FET

DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. FEATURES • High Output Power: P1dB = 20.5dBm(Typ.) • High Gain: G1dB = 7.5dB(Typ.) • High PAE: ηadd =

文件：110.19 Kbytes 页数：4 Pages

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GaAs FET & HEMT Chips

DESCRIPTION The FLK017XP chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATU

文件：59.25 Kbytes 页数：4 Pages

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General Purpose GaAs FET

文件：81.26 Kbytes 页数：4 Pages

EUDYNA