Miniature SMT Power Inductor

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PCA

Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 – 2170 MHz

Description The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：736.6 Kbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 ??2170 MHz

文件：581 Kbytes 页数：10 Pages

Cree

科锐

Thermally-Enhanced High Power RF GaN HEMT

文件：862.15 Kbytes 页数：4 Pages

Infineon

英飞凌