350 V, 26 A Enhancement-Mode GaN Power Transistor

·Higher Switching Frequency – Lower switching losses and lower drive power\n·Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses\n·Smaller Footprint - Higher power density;

EPC

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Enhancement-Mode Power Transistor

文件：1.036329 Mbytes 页数：8 Pages

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包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：TRANS GAN BUMPED DIE

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8 pin Dual-in-Line MIL SPECIFICATION

文件：99.82 Kbytes 页数：2 Pages

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8 pin Dual-in-Line MIL SPECIFICATION

文件：99.82 Kbytes 页数：2 Pages

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8 pin Dual-in-Line Gull-Wing Clock Ocillators

文件：108.03 Kbytes 页数：1 Pages

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