High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FET · +24.5dBm TYPICAL OUTPUT POWER · 11.0dB TYPICAL POWER GAIN FOR EPA040A AND 12.0dB FOR EPA040AV AT 18GHz · 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE · Si3N4 PASSIVATION · ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY

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High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FET FEATURES • NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE • +25.5 dBm OUTPUT POWER AT 1dB COMPRESSION • 7.0 dB POWER GAIN AT 12GHz • 0.3 x 800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFIL

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High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FET · +24.5dBm TYPICAL OUTPUT POWER · 11.0dB TYPICAL POWER GAIN FOR EPA040A AND 12.0dB FOR EPA040AV AT 18GHz · 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE · Si3N4 PASSIVATION · ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY

文件：52.03 Kbytes 页数：2 Pages

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High Efficiency Heterojunction Power FET

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8-12V high efficiency heterojunction power FET

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High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FETFEATURES\n• NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE\n• +25.5 dBm OUTPUT POWER AT 1dB COMPRESSION\n• 7.0 dB POWER GAIN AT 12GHz\n• 0.3 x 800 MICRON RECESSED “MUSHROOM” GATE\n• Si3N4 PASSIVATION\n• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVICES EXTRA HIG • NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE\n• 7.0 dB POWER GAIN AT 12GHz\n• Si3N4 PASSIVATION\n• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVICES EXTRA HIGH POWER EFFICIENCY AND HIGH RELIABILITY;

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