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Features • Low ON-resistance. • High-speed switching. • 4V drive

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High Efficiency Heterojunction Power FET

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[Excelics] High Efficiency Heterojunction Power FET • +39.5dBm TYPICAL OUTPUT POWER • 18.0dB TYPICAL POWER GAIN AT 2GHz • 0.4 X 12,000 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY

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