RF Transistor 10V, 70mA, fT=7GHz, NPN Single SMCP

Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall-sized package permitting applied sets to be made small and slim

文件：526.52 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

VHF to UHF Wide-Band Low-Noise Amplifier Applications

文件：532.27 Kbytes 页数：8 Pages

SANYO

三洋

RF Transistor 10V, 70mA, fT=7GHz, NPN Single SMCP

ONSEMI

安森美半导体

T1/CEPT/ISDN-PRI Interface Transformers

文件：36.15 Kbytes 页数：1 Pages

PCA

T1/CEPT/ISDN-PRI Interface Transformers

文件：36.15 Kbytes 页数：1 Pages

PCA

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：38.16 Kbytes 页数：2 Pages

POLYFET