NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). • High allowable power dissipation. Applications • DC

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SANYO

三洋

1800W peak pulse power (8/20μs)

Features 1800W peak pulse power (8/20μs) Low leakage: nA level Low operating voltage: 12V Ultra low clamping voltage One power line protects Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning) 76A

文件：349.68 Kbytes 页数：4 Pages

FS

SMT Power Inductors

文件：376.71 Kbytes 页数：2 Pages

PULSE

SAW Filter 1237.50MHz

文件：113.93 Kbytes 页数：6 Pages

GOLLEDGE