Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single CP

Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single CP Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58Ω [IC=0.7A, IB=35mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Applicat

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ONSEMI

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Low-Frequency General-Purpose Amplifier Applications

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SANYO

三洋

Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single CP

ONSEMI

安森美半导体

Low-Frequency General-Purpose Amplifier Applications

NPN Epitaxial Planar Silicon Transistor Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58Ω [IC=0.7A, IB=35mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Applications • Low-freque

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SANYO

三洋

Transient Voltage Suppressors

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ONSEMI

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The ESD7504 surge protection is designed to protect high speed data lines from ESD.

Features • Low Capacitance (0.55 pF Max, I/O to GND) • Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) • Low ESD Clamping Voltage • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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UMW

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