Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single CP

Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single CP Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58Ω [IC=0.7A, IB=35mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Applicat

文件：308.07 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Low-Frequency General-Purpose Amplifier Applications

文件：411.99 Kbytes 页数：6 Pages

SANYO

三洋

Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single CP

ONSEMI

安森美半导体

Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm)

VDSS = -20V RDS(on) = 0.27Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

文件：115.76 Kbytes 页数：8 Pages

IRF

Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types

文件：408.02 Kbytes 页数：9 Pages

MICROSEMI

美高森美

PIN DIODE

DESCRIPTION The UM7500 series features Microsemi’s innovative passivated chip design which takes advantage of the latest silicon wafer bonding and junction passivation techniques. This new series of PIN diodes incorporates all of the desirable RF properties of previous Microsemi diodes plus extre

文件：132.43 Kbytes 页数：3 Pages

MICROSEMI

美高森美