Bipolar Transistor -50V, -0.4A, Low VCE(sat) PNP Single SSFP

Bipolar Transistor –50V, –0.4A, Low VCE(sat) PNP Single SSFP Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ[IC=0.5A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Appli

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ONSEMI

安森美半导体

Bipolar Transistor -50V, -0.4A, Low VCE(sat) PNP Single SSFP

ONSEMI

安森美半导体

TTL HD74/HD74S Series

文件：143.51 Kbytes 页数：4 Pages

HITACHIHitachi Semiconductor

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HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

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IRF

HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：135.81 Kbytes 页数：8 Pages

IRF