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EN29LV800B90T中文资料宜扬科技数据手册PDF规格书

EN29LV800B90T
厂商型号

EN29LV800B90T

功能描述

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件大小

239.4 Kbytes

页面数量

43

生产厂商 Eon Silicon Solution Inc.
企业简称

EON宜扬科技

中文名称

宜扬科技股份有限公司

原厂标识
数据手册

下载地址一下载地址二

更新时间

2025-5-17 19:00:00

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EN29LV800B90T规格书详情

GENERAL DESCRIPTION

The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 55ns to eliminate the need for WAIT states in high-performance microprocessor systems.

FEATURES

• Single power supply operation

- Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications.

- Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors.

• Manufactured on 0.28 µm process technology

• High performance

- Access times as fast as 70 ns

• Low power consumption (typical values at 5 MHz)

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1 µA typical standby current (standard access time to active mode)

• Flexible Sector Architecture:

- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode)

- One 8 Kword, two 4 Kword, one 16 Kword and fifteen 32 Kword sectors (word mode)

- Supports full chip erase

- Individual sector erase supported

- Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.

• High performance program/erase speed

- Byte/Word program time: 8µs typical

- Sector erase time: 500ms typical

• JEDEC Standard program and erase commands

• JEDEC standard DATA polling and toggle bits feature

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode

• 0.28 µm double-metal double-poly triple-well CMOS Flash Technology

• Low Vcc write inhibit < 2.5V

• >100K program/erase endurance cycle

• 48-pin TSOP (Type 1)

• Commercial Temperature Range

供应商 型号 品牌 批号 封装 库存 备注 价格
EON
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
EON
21+
BGA
571
原装现货假一赔十
询价
EON
23+
BGA
999999
原装正品现货量大可订货
询价
EONSILICO
23+
NA
8736
专做原装正品,假一罚百!
询价
EON
25+23+
BGA
29687
绝对原装正品现货,全新深圳原装进口现货
询价
EON
24+
BGA
2658
原装正品!现货供应!
询价
EON
21+
BGA
9800
只做原装正品假一赔十!正规渠道订货!
询价
EON
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
EON/宜扬
2402+
BGA
8324
原装正品!实单价优!
询价
EON
22+
BGA
2000
进口原装!现货库存
询价