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型号	下载订购	功能描述	制造商上传企业	LOGO
EN29LV800AB-55RBC	文件：590.73 Kbytes Page：41 Pages	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 文件：590.73 Kbytes 页数：41 Pages	EON 宜扬科技	EON
EN29LV800AB-55RBCP	文件：590.73 Kbytes Page：41 Pages	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 文件：590.73 Kbytes 页数：41 Pages	EON 宜扬科技	EON
EN29LV800AB-55RBI	文件：590.73 Kbytes Page：41 Pages	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 文件：590.73 Kbytes 页数：41 Pages	EON 宜扬科技	EON
EN29LV800AB-55RBIP	文件：590.73 Kbytes Page：41 Pages	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 文件：590.73 Kbytes 页数：41 Pages	EON 宜扬科技	EON
EN29LV800AB-55RTC	文件：590.73 Kbytes Page：41 Pages	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 文件：590.73 Kbytes 页数：41 Pages	EON 宜扬科技	EON
EN29LV800AB-55RTCP	文件：590.73 Kbytes Page：41 Pages	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 文件：590.73 Kbytes 页数：41 Pages	EON 宜扬科技	EON
EN29LV800AB-55RTI	文件：590.73 Kbytes Page：41 Pages	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 文件：590.73 Kbytes 页数：41 Pages	EON 宜扬科技	EON
EN29LV800AB-55RTIP	文件：590.73 Kbytes Page：41 Pages	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 文件：590.73 Kbytes 页数：41 Pages	EON 宜扬科技	EON
EN29LV800AB-70BC	文件：590.73 Kbytes Page：41 Pages	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 文件：590.73 Kbytes 页数：41 Pages	EON 宜扬科技	EON
EN29LV800AB-70BCP	文件：590.73 Kbytes Page：41 Pages	8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 5 文件：590.73 Kbytes 页数：41 Pages	EON 宜扬科技	EON

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	EN29LV800AB-70	EON	25+	TSOP	2650	原装优势!绝对公司现货	询价
深圳市豪迈兴电子有限公司	EN29LV800AB-70BC	EON	24+	BGA	8762	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市一线半导体有限公司	EN29LV800AB-70TC	EON	24+	TSOP48	2700		询价
深圳市卓越微芯电子有限公司	EN29LV800AB-70TC	EON	25+	0415+	78	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市欧立现代科技有限公司	EN29LV800AB-70TC	EN	24+	TTSOP48	6980	原装现货,可开13%税票	询价
上海鑫科润电子科技有限公司	EN29LV800AB-70TC	EON	03/04+	TSOP/48	2700	原装现货海量库存欢迎咨询	询价
深圳市壹芯创科技有限公司	EN29LV800AB-70TC	EON	22+	TSOP48	5000	全新原装现货!自家库存!	询价
深圳市纳立科技有限公司	EN29LV800AB-70TC	EON/ESSI	三年内		1983	只做原装正品	询价
深圳市昊创电子有限公司	EN29LV800AB-70TC	EON/宜扬	0345	FLASH-NOR/29LV800BOTTOM/	11	原装香港现货真实库存。低价	询价
深圳市华睿芯科技有限公司	EN29LV800AB-70TC	EON	24+	TSSOP	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价

更多EN29LV800AB供应商更新时间2025-11-8 10:58:00

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