EN29LV800AB-90TCP中文资料宜扬科技数据手册PDF规格书

GENERAL DESCRIPTION

The EN29LV800A is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800A features 3.0V voltage read and write operation, with access time as fast as 55ns to eliminate the need for WAIT statements in high-performance microprocessor systems.

FEATURES

• Single power supply operation

- Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications.

- Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors.

• Manufactured on 0.18 µm triple-metal double poly triple-well CMOS Flash Technology

• High performance

- Access times as fast as 55 ns

• Low power consumption (typical values at 5 MHz)

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1 µA typical standby current (standard access time to active mode)

• Flexible Sector Architecture:

- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and fifteen 64-Kbyte sectors (byte mode)

- One 8-Kword, two 4-Kword, one 16-Kword and fifteen 32-Kword sectors (word mode)

• Sector protection:

- Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Unprotect allows code changes in previously locked sectors.

• High performance program/erase speed

- Byte/Word program time: 8µs typical

- Sector erase time: 500ms typical

• JEDEC Standard Embedded Erase and Program Algorithms

• JEDEC standard DATA# polling and toggle bits feature

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode

• Low Vcc write inhibit < 2.5V

• Minimum 1,000K endurance cycle

• Package Options

- 48-pin TSOP (Type 1)

- 48-ball 6mm x 8mm FBGA

• Commercial and industrial temperature Range