EN29LV160T-70BIP数据手册EON中文资料规格书

描述 Description

GENERAL DESCRIPTION
The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems.FEATURES
• 3.0V, single power supply operation
   - Minimizes system level power requirements
• High performance
   - Access times as fast as 70 ns
• Low power consumption (typical values at 5 MHz)
   - 9 mA typical active read current
   - 20 mA typical program/erase current
   - 1 µA typical standby current (standard access time to active mode)
• Flexible Sector Architecture:
   - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode)
   - One 8 Kword, two 4 Kword, one 16 Kword and thirty-one 32 Kword sectors (word mode)
   - Supports full chip erase
   - Individual sector erase supported
   - Sector protection:
      Hardware locking of sectors to prevent program or erase operations within individual sectors
      Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.
• High performance program/erase speed
   - Byte program time: 8µs typical
   - Sector erase time: 500ms typical
   - Chip erase time: 17.5s typical
• JEDEC Standard program and erase commands
• JEDEC standard DATA polling and toggle bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode
• 0.23 µm triple-metal double-poly triple-well CMOS Flash Technology
• Low Vcc write inhibit < 2.5V
• 100K program/erase endurance cycle
• Package Options
   - 48-pin TSOP (Type 1)
   - 48 ball 6mm x 8mm FBGA
• Commercial Temperature Range

特性 Features

• 3.0V, single power supply operation
   - Minimizes system level power requirements
• High performance
   - Access times as fast as 70 ns
• Low power consumption (typical values at 5 MHz)
   - 9 mA typical active read current
   - 20 mA typical program/erase current
   - 1 µA typical standby current (standard access time to active mode)
• Flexible Sector Architecture:
   - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode)
   - One 8 Kword, two 4 Kword, one 16 Kword and thirty-one 32 Kword sectors (word mode)
   - Supports full chip erase
   - Individual sector erase supported
   - Sector protection:
      Hardware locking of sectors to prevent program or erase operations within individual sectors
      Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.
• High performance program/erase speed
   - Byte program time: 8µs typical
   - Sector erase time: 500ms typical
   - Chip erase time: 17.5s typical
• JEDEC Standard program and erase commands
• JEDEC standard DATA polling and toggle bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode
• 0.23 µm triple-metal double-poly triple-well CMOS Flash Technology
• Low Vcc write inhibit < 2.5V
• 100K program/erase endurance cycle
• Package Options
   - 48-pin TSOP (Type 1)
   - 48 ball 6mm x 8mm FBGA
• Commercial Temperature Range