16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

[EON] GENERAL DESCRIPTION The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10µs. The EN29LV160J features 3.0V voltage read and write operation, with access t

文件：264.83 Kbytes 页数：44 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

[EON] GENERAL DESCRIPTION The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10µs. The EN29LV160J features 3.0V voltage read and write operation, with access t

文件：264.83 Kbytes 页数：44 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

[EON] GENERAL DESCRIPTION The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10µs. The EN29LV160J features 3.0V voltage read and write operation, with access t

文件：264.83 Kbytes 页数：44 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

[EON] GENERAL DESCRIPTION The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10µs. The EN29LV160J features 3.0V voltage read and write operation, with access t

文件：264.83 Kbytes 页数：44 Pages

ETCList of Unclassifed Manufacturers

未分类制造商