EN29F512-70TCP中文资料宜扬科技数据手册PDF规格书

GENERAL DESCRIPTION

The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.

FEATURES

• 5.0V operation for read/write/erase operations

• Fast Read Access Time

- 45ns, 55ns, 70ns, and 90ns

• Sector Architecture:

- 4 uniform sectors of 16Kbytes each

- Supports full chip erase

- Individual sector erase supported

- Sector protection:

Hardware locking of sectors to prevent program or erase operations within individual sectors

• High performance program/erase speed

- Byte program time: 7µs typical

- Sector erase time: 300ms typical

- Chip erase time: 1.5s typical

• Low Standby Current

- 1µA CMOS standby current-typical

- 1mA TTL standby current

• Low Power Active Current

- 12mA typical active read current

- 30mA program/erase current

• JEDEC Standard program and erase commands

• JEDEC standard DATA polling and toggle bits feature

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode

• 0.23 µm triple-metal double-poly triple-well CMOS Flash Technology

• Low Vcc write inhibit < 3.2V

• 100K endurance cycle

• Package Options

- 32-pin PDIP

- 32-pin PLCC

- 32-pin 8mm x 20mm TSOP (Type 1)

- 32-pin 8mm x 14mm TSOP (Type 1)

• Commercial and Industrial Temperature Ranges