EN29F040-55P中文资料ETC数据手册PDF规格书

[EON]

GENERAL DESCRIPTION

The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 features 5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.

FEATURES

• 5.0V operation for read/write/erase operations

• Fast Read Access Time

- 45ns, 55ns, 70ns, and 90ns

• Sector Architecture:

- 8 uniform sectors of 64Kbytes each

- Supports full chip erase

- Individual sector erase supported

- Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors

• High performance program/erase speed

- Byte program time: 10µs typical

- Sector erase time: 500ms typical

- Chip erase time: 3.5s typical

• Low Standby Current

- 1µA CMOS standby current-typical

- 1mA TTL standby current

• Low Power Active Current

- 30mA active read current

- 30mA program/erase current

• JEDEC Standard program and erase commands

• JEDEC standard DATA polling and toggle bits feature

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode

• 0.35 µm double-metal double-poly triple-well CMOS Flash Technology

• Low Vcc write inhibit < 3.2V

• 100K endurance cycle

• Package Options

- 32-pin PDIP

- 32-pin PLCC

- 32-pin TSOP (Type 1)

• Commercial and Industrial Temperature Ranges