2 Megabit (256K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt

文件：431.89 Kbytes 页数：35 Pages

EON

宜扬科技

2 Megabit (256K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt

文件：431.89 Kbytes 页数：35 Pages

EON

宜扬科技

2 Megabit (256K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt

文件：431.89 Kbytes 页数：35 Pages

EON

宜扬科技

2 Megabit (256K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt

文件：431.89 Kbytes 页数：35 Pages

EON

宜扬科技

2 Megabit (256K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt

文件：431.89 Kbytes 页数：35 Pages

EON

宜扬科技

2 Megabit (256K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt

文件：431.89 Kbytes 页数：35 Pages

EON

宜扬科技

2 Megabit (256K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt

文件：431.89 Kbytes 页数：35 Pages

EON

宜扬科技

2 Megabit (256K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt

文件：431.89 Kbytes 页数：35 Pages

EON

宜扬科技