EN25S10中文资料宜扬科技数据手册PDF规格书

GENERAL DESCRIPTION

The EN25S10 is a 1 Megabit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

The EN25S10 is designed to allow either single Sector/Block at a time or full chip erase operation. The EN25S10 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector or block.

FEATURES

• Single power supply operation

- Full voltage range: 1.65-1.95 volt

• Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

• 1 M-bit Serial Flash

- 1 M-bit/128 K-byte/512 pages

- 256 bytes per programmable page

• High performance

- 75MHz clock rate

• Low power consumption

- 7 mA typical active current

- 1 μA typical power down current

• Uniform Sector Architecture:

- 32 sectors of 4-Kbyte

- 4 blocks of 32-Kbyte

- Any sector or block can be erased individually

• Software and Hardware Write Protection:

- Block Protect Bits are default set to “1” at Power-up

- Write Protect all or portion of memory via software

- Enable/Disable protection with WP# pin

• High performance program/erase speed

- Page program time: 1.5ms typical

- Sector erase time: 90ms typical

- Block erase time 300ms typical

- Chip erase time: 1 seconds typical

• Lockable 256 byte OTP security sector

• Minimum 100K endurance cycle

• Package Options

- 8 pins SOP 150mil body width

- 8 contact USON 2x3 mm

- All Pb-free packages are RoHS compliant

• Industrial temperature Range