EN25B10T-50VC中文资料宜扬科技数据手册PDF规格书

GENERAL DESCRIPTION

The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

FEATURES

• Single power supply operation

- Full voltage range: 2.7-3.6 volt

• 1 M-bit Serial Flash

- 1 M-bit/128 K-byte/512 pages

- 256 bytes per programmable page

• High performance

- 75MHz clock rate

• Low power consumption

- 5 mA typical active current

- 1 μA typical power down current

• Flexible Sector Architecture:

- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,three 32-Kbyte sectors

• Software and Hardware Write Protection:

- Write Protect all or portion of memory via software

- Enable/Disable protection with WP# pin

• High performance program/erase speed

- Byte program time: 7µs typical

- Page program time: 1.5ms typical

- Sector erase time: 300 to 500ms typical

- Chip erase time: 2 Seconds typical

• Minimum 100K endurance cycle

• Package Options

- 8 pins SOP 150mil body width

- 8 contact VDFN

• Commercial and industrial temperature Range