EMD4E001G16G2-150CAS2中文资料1Gb Spin-transfer Torque MRAM数据手册Everspin规格书

描述 Description

The EMD4E001G is the newest and highest capacity STT-MRAM device from Everspin, targeted at enterprise and computing applications that need higher capacity, low latency, persistence and endurance. The larger density 1Gb part offers more effective management of I/O streams, creating a greater level of latency determinism and allowing storage OEMs to significantly improve quality of service of their products.  Similar benefits can also be achieved using the 1Gb STT-MRAM device as a persistent data buffer in SSDs, storage and fabric accelerators, computational storage, and other applications.
• ST-DDR4 interface for easy integration into storage, computing, and networking applications
• 667MHz speed option, 1333MT/s per pin transfer rate
• JEDEC-compatible BGA package

简介

EMD4E001G16G2-150CAS2属于集成电路（IC）的存储器。由制造生产的EMD4E001G16G2-150CAS2存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。