9-16 GHz Medium Power MMIC

FEATURES • 9-16 GHz BANDWIDTH • +18.0 dBm TYPICAL OUTPUT POWER • 14 dB ± 1.5 dB TYPICAL POWER GAIN • TWO SECTION, DISTRIBUTED AMPLIFIER • DUAL BIAS SUPPLY • 0.3 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIE

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EXCELICS

9-16 GHz low noise MMIC

Excelics

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

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MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

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MOSPEC

统懋

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.

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PERKINELMER