EM639165TS-8中文资料8Mega x 16bits SDRAM数据手册EtronTech规格书

描述 Description

Overview
EM639165 is a high-speed Synchronous Dynamic Random Access Memory (SDRAM), organized as 4 banks x 2,097,152 words x 16 bits. All inputs and outputs are referenced to the rising edge of CLK. It achieves very high-speed data rates up to 133MHz, and is suitable for main memories or graphic memories in computer systems. For handheld device application, we also provide a low power option, with self-refresh current under 800 mA.

特性 Features

• Single 3.3 ± 0.3V power supply
• Fast clock rate
-  PC133: 133 MHz (CL3)
-  PC100: 100 MHz (CL2)
• Fully synchronous operation referenced to clock rising edge
• 4-bank operation controlled by BA0, BA1 (Bank Address)
• Programmable Mode registers
- /CAS Latency: 2 or 3
- Burst Length: 1, 2, 4, 8or full page
- Burst Type: interleaved or linear burst
• Byte Control – DQML and DQMU
• Random column access
• Auto precharge / All banks precharge controlled by A10
• Auto and self-refresh
• Self-refresh mode: standard and low power
• 4096 refresh cycles/64ms
• Interface: LVTTL
• 54-pin 400 mil plastic TSOP II package