EM638325TS-6SLASH-6G中文资料钰创科技数据手册PDF规格书

Overview

The EM638325 SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits. Read and write accessesto the SDRAM are burst oriented; accesses start at a selected location and continuefor a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.