EM513-TP

Package：DO-204AL，DO-41，轴向；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GP 1A DO-41

F513

U.L.ApprovedDualFunctionFuseResistors

F513

DualFunctionFuseResistors

FW513

MOSFET:N-ChannelSiliconMOSFETFRD:Ultrahigh-SpeedSwitchingDiodeSwitchingDeviceApplications

MOSFET:N-ChannelSiliconMOSFET FRD:Ultrahigh-SpeedSwitchingDiode Features •FETRDS(on)=5.8Ω(typ.),10Vdrive •FRDVF=1.1V(typ.),trr=40ns(typ.) •NchMOSFET+FRD

FX513

PNPEPITAXIALPLANARSILICONTRANSISTOR

PNPEpitaxialPlanarSiliconTransistor Features •Compositetypewith2PNPtransistorscontainedinonepackage,facilitainghigh-densitymounting. •TheFX513containstwo2SA2013equivalentchipsinonepackage. •Excellentinpaircapabilityofabuilt-inelement. Applications •Relayd

G513

PulseTransformers,SuitableforDataInterface

G513

PULSETRANSFORMER

GL513

TO-18TypeInfraredEmittingDiode

■Features 1.Output:GL514ΦeMIN.3.31mWat IF=100mA GL513FΦeMIN.1.44mWat IF=100mA 2.Beamangle:GL514∆θ:TYP.±7˚ GL513F∆θ:TYP.±50˚ 3.To-18typestandardpackage 4.Highreliabilit

GL513F

TO-18TypeInfraredEmittingDiode

■Features 1.Output:GL514ΦeMIN.3.31mWat IF=100mA GL513FΦeMIN.1.44mWat IF=100mA 2.Beamangle:GL514∆θ:TYP.±7˚ GL513F∆θ:TYP.±50˚ 3.To-18typestandardpackage 4.Highreliabilit

GVXO-513

3.3VVCXO

Features ➠3.3Vsupply ➠Fundamentalmodecrystalupto52.0MHz ➠Choiceofpullability&stability ➠Enable/disabletristatefunction ➠MiniatureSMpackage