EM512D16中文资料ETC数据手册PDF规格书

[NanoAmp Solutions, Inc.]

Overview

The EM512D16 is an integrated memory device containing a low power 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The base design is the same as NanoAmp’s standard low voltage version, EM512W16. The device is fabricated using NanoAmp’s advanced CMOS process and high-speed/ultra low-power/ low-voltage circuit technology. The device pinout is compatible with other standard 512K x 16 SRAMs. The device is designed such that a creative user can improve system power and performance parameters through use of it’s unique page mode operation.

特性 Features

• Dual Voltage for Optimum Performance:

Vccq - 2.3 to 3.6 Volts

Vcc - 1.7 to 2.2 Volts

• Extended Temperature Range:

-40 to +85 °C

• Fast Cycle Time:

Random Access < 70 ns

Page Mode < 25 ns

• Very Low Operating Current:

ICC < 5 mA typical at 2V, 10 Mhz

• Very Low Standby Current:

ISB < 2 uA @ 55 °C

• 16 Word Fast Page-Mode Operation

• 48-Pin BGA or Known Good Die available