IRF9410PBF

GENERATIONVTECHNOLOGY

IRF9410PBF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF9410TRPBF

GENERATIONVTECHNOLOGY

KI9410DY

N-Channel30-V(D-S)MOSFET

■Features ●VDS(V)=30V ●ID=7A(VGS=10V) ●RDS(ON)

LA9410

FinalAudioOutputICforLDPlayers

Overview TheLA9410finalaudiooutputICforlaserdiskplayershasaninternalinputamplifierforthe1-bitDAC,40kHzLPF,digital/analogsignalselectcircuit,outputmute,volumecircuit,mixingamplifierandlimittercircuitforRFoutput,andvoltageregulatorforplusandminuspowersu

M9410

MODULARIN-GRADELUMINAIRESINGLELENS

MG9410

SILICONEPITAXIALPLANARPNPTRANSISTOR

MG9410-R

SILICONEPITAXIALPLANARPNPTRANSISTOR

MMJT9410

BipolarPowerTransistorsNPNSilicon

MMJT9410

BipolarPowerTransistors

BipolarPowerTransistors NPNSilicon •Collector–EmitterSustainingVoltage—VCEO(sus) =30Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE =85(Min)@IC=1.0Adc =60(Min)@IC=3.0Adc •LowCollector–EmitterSaturationVoltage—VCE(sat) =0.2Vdc(Max)@IC=