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AQV410	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV410EH	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV410EHA	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV410EHAX	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQV410EHAZ	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQW410EHA	文件：171.29 Kbytes Page：3 Pages	PhotoMOSRelayDimensions	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
AQY410EH	文件：49.7 Kbytes Page：3 Pages	GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQY410EH	文件：81.93 Kbytes Page：3 Pages	NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQY410EHA	文件：81.93 Kbytes Page：3 Pages	NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQY410EHA	文件：49.7 Kbytes Page：3 Pages	GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQY410EHAX	文件：49.7 Kbytes Page：3 Pages	GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQY410EHAX	文件：81.93 Kbytes Page：3 Pages	NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQY410EHAZ	文件：81.93 Kbytes Page：3 Pages	NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AQY410EHAZ	文件：49.7 Kbytes Page：3 Pages	GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQY410SX	文件：45.73 Kbytes Page：3 Pages	GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AQY410SZ	文件：45.73 Kbytes Page：3 Pages	GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
AT-410	文件：85.41 Kbytes Page：3 Pages	FixedAttenuators(N,BNC,TNC)	HIROSEHirose Electric Company 广濑日本广濑电机株式会社	HIROSE
AT-410(40)	文件：1.18736 Mbytes Page：12 Pages	50ohmswidevarietiesstandardconnectors	HIROSEHirose Electric Company 广濑日本广濑电机株式会社	HIROSE
ATN410	文件：13.85927 Mbytes Page：51 Pages	Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
BCL-410	文件：178.86 Kbytes Page：3 Pages	CompressionStyleRingTongueTerminal	MOLEX4Molex Electronics Ltd. 莫仕公司MOLEX莫仕公司	MOLEX4

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详细参数

型号：
ELANSC410
制造商：
AMD
制造商全称：
Advanced Micro Devices
功能描述：
Single-Chip, Low-Power, PC/AT-Compatible Microcontrollers

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市维尔达电子有限公司	ELanSC410-100AI	现货	2023+		80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市永贝尔科技有限公司	ELANSC410-100AI	AMD	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价
深圳市创新迹电子有限公司	ELANSC410-100AI	现货	23+		5000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	ELANSC410-100AI	现货	23+		5000	专注配单,只做原装进口现货	询价
深圳市莱克讯科技有限公司	ELANSC410-133AC	ADM	2017+	BGA	25809	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市科恒伟业电子有限公司	ELANSC410-133AC	ADM	2017+	BGA	6528	只做原装正品假一赔十!	询价
深圳市鹏和科技有限公司	ELANSC410-133AC	ADM	24+	BGA	5000	只做原装公司现货	询价
深圳宇航军工半导体有限公司	ELANSC410-133AC	ADM	19+	BGA	256800	原厂代理渠道,每一颗芯片都可追溯原厂；	询价
深圳市华来深电子有限公司	ELANSC410-133AC	ADM	23+	BGA	8650	受权代理!全新原装现货特价热卖!	询价
深圳市百视威讯电子科技有限公司	ELANSC410-133AC		23+	N/A	90350	正品授权货源可靠	询价

更多ELANSC410供应商更新时间2024-5-17 16:28:00

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