Description

The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor.

The devices are packaged in an 8-pin DIP package and available in wide-lead spacing and SMD option.

Features

• High speed 1Mbit/s

• High isolation voltage between input and output (Viso=5000 Vrms )

• Guaranteed performance from 0°C to 70°C

• Wide operating temperature range of -55°C to 100°C

• Pb free and RoHS compliant

• UL approved (No. 214129)

• VDE approved (No. 132249)

• SEMKO approved

• NEMKO approved

• DEMKO approved

• FIMKO approved

• CSA approved (No. 2037145)

Applications

• Line receivers

• Telecommunication equipments

• Power transistor isolation in motor drives

• Replacement for low speed phototransistor photo couplers

• Feedback loop in switch-mode power supplies

• Home appliances

• High speed logic ground isolation