MULTILAYER CERAMIC CHIP CAPACITORS

C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency

文件：1.74951 Mbytes 页数：55 Pages

TDK

东电化

Low Capacitance, 16-Channel and 8-Channel iCMOS Multiplexers with 1.2 V and 1.8 V JEDEC Logic Compliance

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文件：1.00337 Mbytes 页数：23 Pages

AD

亚德诺

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

文件：36.08 Kbytes 页数：2 Pages

POLYFET

Intermediate Frequency Digital Variable Gain Amplifier

文件：2.41575 Mbytes 页数：14 Pages

RENESAS

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