型号：PMV185XN；Package：TO-236AB；30 V, single N-channel Trench MOSFET

文件：321.53 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：AP2121AJ4C-1.3TRG1；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.2V, 1.3V and 1.5V Versions) · Low Standby Current: 0.1μA Typical · Low Quiescent Current: 25μA Typical · High Ripple Rejection: 70dB Typical （f=1kHz） · Output Current: More Than 200mA (300mA Limit) · Extremely Low Noise:

文件：1.19367 Mbytes 页数：29 Pages

DIODES

美台半导体

型号：AP2210N-2.8TRE1；Package：SOT-23-3；300mA RF ULDO REGULATOR

Features • Up to 300mA Output Current • Excellent ESR Stability • Low Standby Current • Low Dropout Voltage: VDROP = 250mV at 300mA • High Output Accuracy: ±1 • Good Ripple Rejection Ability: 75dB at 100Hz and IOUT = 100μA • Tight Load and Line Regulation • Low Temperature Coefficient • O

文件：715.83 Kbytes 页数：30 Pages

DIODES

美台半导体

型号：AP2210N-3.0TRE1；Package：SOT-23-3；300mA RF ULDO REGULATOR

Features • Up to 300mA Output Current • Excellent ESR Stability • Low Standby Current • Low Dropout Voltage: VDROP = 250mV at 300mA • High Output Accuracy: ±1 • Good Ripple Rejection Ability: 75dB at 100Hz and IOUT = 100μA • Tight Load and Line Regulation • Low Temperature Coefficient • O

文件：715.83 Kbytes 页数：30 Pages

DIODES

美台半导体

型号：AP2210N-3.3TRE1；Package：SOT-23-3；300mA RF ULDO REGULATOR

Features • Up to 300mA Output Current • Excellent ESR Stability • Low Standby Current • Low Dropout Voltage: VDROP = 250mV at 300mA • High Output Accuracy: ±1 • Good Ripple Rejection Ability: 75dB at 100Hz and IOUT = 100μA • Tight Load and Line Regulation • Low Temperature Coefficient • O

文件：715.83 Kbytes 页数：30 Pages

DIODES

美台半导体

型号：AP2213H-2.5TRE1；Package：SOT-223；500mA LOW NOISE LDO REGULATOR

Features • Up to 500mA Output Current • Low Standby Current • Low Dropout Voltage: VDROP = 350mV at 500mA • High Output Accuracy: ±1 • Good Ripple Rejection Ability: 75dB at 100Hz and IOUT = 100μA • Tight Load and Line Regulation • Low Temperature Coefficient • Over Current Protection • T

文件：507.83 Kbytes 页数：22 Pages

DIODES

美台半导体

型号：AP2213H-3.0TRE1；Package：SOT-223；500mA LOW NOISE LDO REGULATOR

Features • Up to 500mA Output Current • Low Standby Current • Low Dropout Voltage: VDROP = 350mV at 500mA • High Output Accuracy: ±1 • Good Ripple Rejection Ability: 75dB at 100Hz and IOUT = 100μA • Tight Load and Line Regulation • Low Temperature Coefficient • Over Current Protection • T

文件：507.83 Kbytes 页数：22 Pages

DIODES

美台半导体

型号：AP2213H-3.3TRE1；Package：SOT-223；500mA LOW NOISE LDO REGULATOR

Features • Up to 500mA Output Current • Low Standby Current • Low Dropout Voltage: VDROP = 350mV at 500mA • High Output Accuracy: ±1 • Good Ripple Rejection Ability: 75dB at 100Hz and IOUT = 100μA • Tight Load and Line Regulation • Low Temperature Coefficient • Over Current Protection • T

文件：507.83 Kbytes 页数：22 Pages

DIODES

美台半导体

型号：AZ1117BH-1.2TRE1；Package：SOT-223；LOW DROPOUT LINEAR REGULATOR

Features · Current Limit: 1.0A (Typ.) · Output Noise from 10Hz to 10KHz: 0.003 of VOUT · PSRR at IOUT=300mA and f=120Hz: 70dB · Output Voltage Accuracy: ±1 · On-chip Thermal Shutdown · Maximum Quiescent Current: IQMAX=6mA · Operation Junction Temperature: -20 to 125oC

文件：527.33 Kbytes 页数：23 Pages

BCDSEMI

新进半导体

型号：AZ1117BH-1.5TRE1；Package：SOT-223；LOW DROPOUT LINEAR REGULATOR

Features · Current Limit: 1.0A (Typ.) · Output Noise from 10Hz to 10KHz: 0.003 of VOUT · PSRR at IOUT=300mA and f=120Hz: 70dB · Output Voltage Accuracy: ±1 · On-chip Thermal Shutdown · Maximum Quiescent Current: IQMAX=6mA · Operation Junction Temperature: -20 to 125oC

文件：527.33 Kbytes 页数：23 Pages

BCDSEMI

新进半导体