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BU4311FVE

LowVoltageDetectorICwithAdjustableOutputDelay

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BU4311FVE-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BU4311FVE-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BU4311FVE-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BU4311G

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BU4311G

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BU4311G

CMOSVoltageDetectorICswithadjustableoutputdelay.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BU4311G

LowVoltageDetectorICwithAdjustableOutputDelay

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BU4311G-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BU4311G-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm Semiconductor

罗姆罗姆半导体集团

BU4311G-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm Semiconductor

罗姆罗姆半导体集团

C4311A

2C20SOLIDTCSR-PVCPVCCOMMUNICATIONCABLE

GENERALGeneral Electric

通用电气公司美国通用电气公司

CED4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-33A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-33A,RDS(ON)=18mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=30mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM4311

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

CEM4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-9.3A,RDS(ON)=18mW@VGS=-10V. RDS(ON)=30mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM4311

P-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

CEM4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-9.3A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-33A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-33A,RDS(ON)=18mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=30mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

详细参数

  • 型号:

    EG4311

  • 制造商:

    E-Switch Inc

  • 功能描述:

    EG Series SPDT On-On Right Angle Through Hole Slide Switch

供应商型号品牌批号封装库存备注价格
E-SWITCH
23+
NA
39960
只做进口原装,终端工厂免费送样
询价
EGMICRO
18+
SOT23-6
45000
原装正品现货,可开发票,假一赔十
询价
EG
2021+
SOT-23-6
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
EG(屹晶微)
2021+
SOT-23-6
499
询价
EG
21+ROHS
SOT-23-6
12740
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
EG屹晶微
23+
SOT-23-6
22820
原装正品,支持实单
询价
EG/屹晶微
2023+
SOT23-6
48000
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站
询价
EG
SOT-23-6
265209
假一罚十原包原标签常备现货!
询价
EG
23+
SOT-23-6
50000
全新原装正品现货,支持订货
询价
EG
23+
NA/
968
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多EG4311供应商 更新时间2024-5-15 10:30:00