EG3113D

高压600V2A半桥驱动芯片; • 高端悬浮自举电源设计，耐压可达 600V\n\n\n\n• 适应 5V、3.3V 输入电压\n\n\n\n• 最高频率支持 500KHZ\n\n\n\n• 低端 VCC 电压范围 8V - 20V\n\n\n\n• 输出电流能力 IO+/- 2A/2.5A\n\n\n\n• 内建死区控制电路\n\n\n\n• 自带闭锁功能，彻底杜绝上、下管输出同时导通\n\n\n\n• HIN 输入通道高电平有效，控制高端 HO 输出\n\n\n\n• LIN 输入通道低电平有效，控制低端 LO 输出\n\n\n\n• 外围器件少\n\n\n\n• 封装形式：SOP - 8\n\n\n\n• 无铅无卤符合 ROHS 标准;

EG3113D 是一款高性价比的大功率 MOS 管、IGBT 管栅极驱动专用芯片，内部集成了逻辑信号输入处理电路、死区时控制电路、闭锁电路、电平位移电路、脉冲滤波电路及输出驱动电路，专用于无刷电机控制器中的驱动电路。高端工作电压可达 600V，低端 Vcc 的电源电压范围宽 8V - 20V，静态电流约 300uA。该芯片具有闭锁功能防止输出功率管同时导通，输入通道 HIN 内建了一个 200K 下拉电阻，LIN 内建了上拉 5V 高电位，在输入悬空时使上、下功率 MOS 管处于关闭状态，输出电流能力 IO+/- 2/2.5A，采用 SOP8 封装。

FJV3113R

NPNEpitaxialSiliconTransistor

Description Transistorswithbuilt-inresistorscanbeexcellentspace-andcost-savingsolutionsbyreducingcomponentcountandsimplifyingcircuitdesign. Features •100mAOutputCurrentCapability •Built-inBiasResistor(R1=2.2kΩ,R2=47kΩ) Application •Switching,Interface,and

FJV3113R

NPNEpitaxialSiliconTransistor

Description Transistorswithbuilt-inresistorscanbeexcellentspace-andcost-savingsolutionsbyreducingcomponentcountandsimplifyingcircuitdesign. Features •100mAOutputCurrentCapability •Built-inBiasResistor(R1=2.2kΩ,R2=47kΩ) Application •Switching,Interface,and

FJV3113RMTF

NPNEpitaxialSiliconTransistor

Description Transistorswithbuilt-inresistorscanbeexcellentspace-andcost-savingsolutionsbyreducingcomponentcountandsimplifyingcircuitdesign. Features •100mAOutputCurrentCapability •Built-inBiasResistor(R1=2.2kΩ,R2=47kΩ) Application •Switching,Interface,and

FKBA3113

P-Ch30VFastSwitchingMOSFETs

Description TheFKBA3113isthehighcelldensitytrenched P-chMOSFETs,whichprovideexcellent RDSONandgatechargeformostofthe synchronousbuckconverterapplications. TheFKBA3113meettheRoHSandGreen Productrequirement,100EASguaranteed withfullfunctionreliabilityapprove

FKCD3113

P-Ch30VFastSwitchingMOSFETs

Description TheFKCD3113combinesadvancedtrench MOSFETtechnologywithalowresistance packagetoprovideextremelylowRDSON.This deviceisidealforloadswitchandbattery protectionapplications. TheFKCD3113meettheRoHSandGreen Productrequirementwithfullfunctionreliability

FKD3113

P-Ch30VFastSwitchingMOSFETs

Description TheFKD3113isthehighcelldensitytrenched P-chMOSFETs,whichprovideexcellentRDSON andgatechargeformostofthesynchronousbuck converterapplications. TheFKD3113meettheRoHSandGreenProduct requirement,100EASguaranteedwithfull functionreliabilityapproved.

FKK3113

P-Ch30VFastSwitchingMOSFETs

Description TheFKK3113isthehighcelldensitytrenched P-chMOSFETs,whichprovideexcellentRDSON andgatechargeformostofthesynchronousbuck converterapplications. TheFKK3113meettheRoHSandGreenProduct requirement,100EASguaranteedwithfull functionreliabilityapproved.

FKN3113

P-Ch30VFastSwitchingMOSFETs

Description TheFKN3113isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKN3113meettheRoHSandGreenProduct requirementwithfullfunctionreliabilityapproved.

FKQ3113

P-Ch30VFastSwitchingMOSFETs

Description TheFKQ3113isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKQ3113meettheRoHSandGreenProduct requirement,100EASguaranteedwithfull functionreliabilit