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E-SWITCH

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

Description This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter r

文件：50.97 Kbytes 页数：6 Pages

HSMC

华昕

3-PHASE BRIDGE DRIVER

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

文件：218.29 Kbytes 页数：12 Pages

IRF

Floating channel designed for bootstrap operation Fully operational to 600V or1200V Tolerant to negative transient voltage dV/dt immune

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

文件：433.98 Kbytes 页数：27 Pages

IRF