高压600V自振荡半桥驱动芯片

EG2153 是一种高压、高速功率 MOSFET 和 IGBT 栅极驱动器，内部集成了高压半桥驱动电路和一个振荡器，形成一款多功能，更加安全的功率驱动芯片。CT 管脚具有保护关断功能，可以用一个电压信号使驱动器停止输出。VDD 上电低于开启电压时，输出低电平，超过开启阈值，驱动器就能稳定的频率振荡。 • 高端悬浮自举电源设计，耐压可达 600V\n• CT, RT 可编程振荡器\n• VCC 电源 12V 齐纳钳位\n• 微小启动电流\n• CT 脚带使能关闭功能\n• VCC 和 VB 端电源带欠压保护\n• 输出电流能力 IO+/- 0.2A/0.3A\n• 内部自带死区\n• 低压输出端信号逻辑和 RT 端相同\n• 外围器件少\n• 封装形式：SOP8\n• 无铅无卤符合 ROHS 标准;

EGmicro

屹晶微电子

Ultrafast Recovery Diode

General Description Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a high frequency rectifier FRD for FCC power supply, etc. Features ● The shortest trr characteristic in the world at high temperatur

文件：302.93 Kbytes 页数：8 Pages

SANKEN

三垦

Ultrafast Recovery Diode

文件：303.36 Kbytes 页数：8 Pages

SANKEN

三垦

CMOS POSITIVE VOLTAGE REGULATOR

Description The GQ2153 series of positive, linear regulators feature low quiescent current (30μA typ.) with low dropout voltage, making them ideal for battery applications. These rugged devices have both Thermal Shutdown, and Current Fold-back to prevent device failure under the “Worst” of opera

文件：543.3 Kbytes 页数：7 Pages

GTM

勤益投资控股