IRF1310NSPBF

ADVANCEDPROCESSTECHNOLOGY

IRF1310NSTRLPBF

AdvancedProcessTechnology

IRF1310S

PowerMOSFET(Vdss=100V,Rds(on)=0.04ohm,Id=41A)

VDSS=100V RDS(on)=0.04Ω ID=41A Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatH

IRFI1310G

PowerMOSFET(Vdss=100V,Rds(on)=0.04ohm,Id=22A)

VDSS=100V RDS(on)=0.04Ω ID=22A Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatH

IRFI1310N

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=24A)

Through-HolePackags TO-220FullPak(FullyIsolated)

IRFI1310N

IscN-ChannelMOSFETTransistor

IRFI1310NPBF

HEXFET짰PowerMOSFET

IRFI1310NPBF

ADVANCEDPROCESSTECHNOLOGY

IRFI1310NPBF

HEXFET짰PowerMOSFET

IRFM1310ST

N-CHANNELPOWERMOSFET