型号：PMV170UN；Package：TO-236AB；20 V, single N-channel Trench MOSFET

文件：320.8 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：6.0SMAJ120CA；Package：DO-214AC；5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glass passivated chip 600W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260°C/10s at terminals. RoHS compliant Features

文件：3.35089 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

型号：AP2121AJ4C-1.2TRG1；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.2V, 1.3V and 1.5V Versions) · Low Standby Current: 0.1μA Typical · Low Quiescent Current: 25μA Typical · High Ripple Rejection: 70dB Typical （f=1kHz） · Output Current: More Than 200mA (300mA Limit) · Extremely Low Noise:

文件：1.19367 Mbytes 页数：29 Pages

DIODES

美台半导体

型号：AP2121N-1.3TRE1；Package：SOT-23-3；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.2V, 1.3V and 1.5V Versions) · Low Standby Current: 0.1μA Typical · Low Quiescent Current: 25μA Typical · High Ripple Rejection: 70dB Typical （f=1kHz） · Output Current: More Than 200mA (300mA Limit) · Extremely Low Noise:

文件：1.19367 Mbytes 页数：29 Pages

DIODES

美台半导体

型号：AS393GTR-E1；Package：TSSOP-8；LOW POWER LOW OFFSET VOLTAGE DUAL COMPARATORS

Features  Wide Supply Voltage Range  Single Supply: 2V to 36V  Dual Supplies: ±1.0V to ±18V  Low Supply Current Drain: 0.6mA  Low Input Bias Current: 25nA (Typical)  Low Input Offset Current: ±5.0nA (Typical)  Low Input Offset Voltage: 1.0mV (Typical)  Input Common Mode Voltage Ran

文件：426.28 Kbytes 页数：14 Pages

DIODES

美台半导体

型号：BCV49；Package：SC-62；NPN Darlington transistors

FEATURES •High current (max. 500 mA) •Low voltage (max. 60 V) •High DC current gain (min. 20000). APPLICATIONS •Preamplifier input applications. DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48.

文件：323.02 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BCV49；Package：SOT89；NPN Darlington transistors

FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 20000). APPLICATIONS • Preamplifier input applications. DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48.

文件：123.63 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BCV49；Package：SOT-89；NPN Darlington transistors

DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48. FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 20000). APPLICATIONS • Preamplifier input applications.

文件：43.02 Kbytes 页数：8 Pages

PHI

飞利浦

型号：BCV49；Package：SOT-89；NPN Darlington transistors

DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48. FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • High DC current gain (min. 20000). APPLICATIONS • Preamplifier input applications.

文件：124.37 Kbytes 页数：8 Pages

恩XP

型号：BCW66G；Package：SOT-23；NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

文件：39.82 Kbytes 页数：2 Pages

Zetex