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FODM214A

SingleChannel,AC/DCSensingInput,PhototransistorOptocouplerInHalf-PitchMini-Flat4-PinPackage

TheFODM217seriesconsistofagalliumarsenideinfraredemitting diodedrivingaphototransistor.TheFODM214seriesconsistoftwo galliumarsenideinfraredemittingdiodesconnectedininverseparallel forACoperation.Bothwerebuiltinacompact,half−pitch,mini−flat, 4−pinpackage.Th

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FODM214AV

SingleChannel,AC/DCSensingInput,PhototransistorOptocouplerInHalf-PitchMini-Flat4-PinPackage

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FODM214AV

SingleChannel,AC/DCSensingInput,PhototransistorOptocouplerInHalf-PitchMini-Flat4-PinPackage

TheFODM217seriesconsistofagalliumarsenideinfraredemitting diodedrivingaphototransistor.TheFODM214seriesconsistoftwo galliumarsenideinfraredemittingdiodesconnectedininverseparallel forACoperation.Bothwerebuiltinacompact,half−pitch,mini−flat, 4−pinpackage.Th

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FP214

NPNEpitaxialPlanarSiliconTransistorMotorDriverApplications

MotorDriverApplications Features •Compositetypewith2NPNtransistors,facilitatinghigh-densitymounting. •TheFP214iscomposedof2chips,eachbeingequivalenttothe2SD2100,placedinonepackage.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

FSL214

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEv

Intersil

Intersil Corporation

FSL214D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEv

Intersil

Intersil Corporation

FSL214R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEv

Intersil

Intersil Corporation

FW214

Ultrahigh-SpeedSwitchingApplications

Features •LowONresistance. •2.5Vdrive.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

FX214

VSBAudioScrambler

CMLMICRO

CML Microcircuits

G214

CompactMiniDIP,2WSingle&DualOutputDC/DCConverters

MPD

MPD (Memory Protection Devices)

晶体管资料

  • 型号:

    EFT214

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Ge-PNP

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    3A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    2

  • 可代换的型号:

    ASZ15,2N4241,3AD56A,

  • 最大耗散功率:

    30W

  • 放大倍数:

  • 图片代号:

    E-44

  • vtest:

    60

  • htest:

    999900

  • atest:

    3

  • wtest:

    30

供应商型号品牌批号封装库存备注价格
EFT
23+
2096
询价
TAIWAN
16+
BGA
2500
进口原装现货/价格优势!
询价
TAIWAN
25+
BGA
6500
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
NIPPONCHE
DIP-2
32000
一级代理 原装正品假一罚十价格优势长期供货
询价
CHEMI-CON
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
更多EFT214供应商 更新时间2025-5-21 15:55:00