EF8A02F

Glass Passivated Standard Rectifier

SF8A02

GlassPassivatedSuperFastRecoveryRectifier

SF8A02F

GlassPassivatedSuperFastRecoveryRectifier

SF8A02F

GlassPassivatedSuperFastRecoveryRectifier

SF8A02-G

GlassPassivatedSuperFastRecoveryRectifier

TPC8A02-H

竊큀SHIBAFieldEffectTransistorwithBuilt-inSchottkyBarrierDiodeHigh-EfficiencyDC/DCConverterApplications

High-EfficiencyDC/DCConverterApplications NotebookPCApplications Portable-EquipmentApplications •Built-inschottkybarrierdiode Lowforwardvoltage:VDSF=0.6V(Max.) •High-speedswitching. •Smallgatecharge.:QSW＝11nC(Typ.) •Lowdrain-sourceON-resistance:RDS(ON)=4.3

TPC8A02-H

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

TPCA8A02-H

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCA8A02-H

N-Channel30V(D-S)MOSFET

TPCA8A02-H

HighEfficiencyDC-DCConverterApplicationsNotebookPCApplications

HighEfficiencyDC-DCConverterApplications NotebookPCApplications PortableEquipmentApplications •Built-inaschottkybarrierdiode Lowforwardvoltage:VDSF=−0.6V(max) •High-speedswitching •Smallgatecharge:QSW=8.6nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=