型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
丝印:EE;Package:SOT-323;For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5814,2SC5815,2SC5816,2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURE ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ● Low colle 文件:195.54 Kbytes 页数:5 Pages | ISAHAYA 谏早电子 | ISAHAYA | ||
丝印:EE;Package:DO-214AC;5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS) Glass passivated chip 600W peak pulse power capability with a 10/1000us waveform Repetitive rate (duty cycle):0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260°C/10s at terminals. RoHS compliant Features 文件:3.35089 Mbytes 页数:6 Pages | UNSEMI 优恩半导体 | UNSEMI | ||
丝印:EE;Package:CSP-4;HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR Features · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.2V, 1.3V and 1.5V Versions) · Low Standby Current: 0.1μA Typical · Low Quiescent Current: 25μA Typical · High Ripple Rejection: 70dB Typical (f=1kHz) · Output Current: More Than 200mA (300mA Limit) · Extremely Low Noise: 文件:1.19367 Mbytes 页数:29 Pages | DIODES 美台半导体 | DIODES | ||
丝印:EE;Package:SOT89;PNP Darlington transistor 1. General description PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BCV49 2. Features and benefits • Very high DC current gain (min. 10000) • High current (max. 500 mA) • Low voltage (max. 60 V) • AEC-Q101 qualified 文件:182.32 Kbytes 页数:8 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
丝印:EE;Package:SSOP5;Standard CMOS Voltage Detector IC Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel 文件:433.03 Kbytes 页数:18 Pages | ROHM 罗姆 | ROHM | ||
丝印:EE;Package:VSOF5;High accuracy detection, Ultra-low current consumption Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel 文件:433.03 Kbytes 页数:18 Pages | ROHM 罗姆 | ROHM | ||
丝印:EE;Package:VSOF5;Standard CMOS Voltage Detector IC Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel 文件:507.55 Kbytes 页数:18 Pages | ROHM 罗姆 | ROHM | ||
丝印:EE;Package:VSOF5;Standard CMOS Voltage Detector IC Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel 文件:507.55 Kbytes 页数:18 Pages | ROHM 罗姆 | ROHM | ||
丝印:EE;Package:VSOF5;Standard CMOS Voltage Detector IC Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel 文件:433.03 Kbytes 页数:18 Pages | ROHM 罗姆 | ROHM | ||
丝印:EE;Package:VSOF5;Standard CMOS Voltage Detector IC Description ROHM’s BD48□□G/FVE and BD49□□G/FVE series are highly accurate, low current consumption reset IC series. The lineup was established with tow output types (Nch open drain and CMOS output) and detection voltages range from 2.3V to 6.0V in increments of 0.1V, so that the series may be sel 文件:507.55 Kbytes 页数:18 Pages | ROHM 罗姆 | ROHM |
详细参数
- 型号:
EE
- 功能描述:
TVS 二极管 - 瞬态电压抑制器 110Vr 600W 3.4A 5% BiDirectional
- RoHS:
否
- 制造商:
Vishay Semiconductors
- 极性:
Bidirectional
- 击穿电压:
58.9 V
- 钳位电压:
77.4 V
- 峰值浪涌电流:
38.8 A
- 封装/箱体:
DO-214AB
- 最小工作温度:
- 55 C
- 最大工作温度:
+ 150 C
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SMB |
8950 |
BOM配单专家,发货快,价格低 |
询价 | ||
SUNMATE(森美特) |
2019+ROHS |
DO-214AA(SMB) |
66688 |
森美特高品质产品原装正品免费送样 |
询价 | ||
EIC |
23+ |
SMB |
56000 |
询价 | |||
群鑫 |
22+ |
SMB |
30000 |
原装正品 一级代理 |
询价 | ||
VISHAY/威世 |
2019+PB |
DO-214AA(SMBJ) |
130000 |
原装正品 可含税交易 |
询价 | ||
LITTELFU |
09+ |
DO-214AA |
95000 |
绝对全新原装强调只做全新原装现 |
询价 | ||
ON/DIODES/PANJIT |
24+ |
SMB |
43000 |
询价 | |||
力特 |
23+ |
SMB |
30000 |
原装正品,假一罚十 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 |
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