EDS-619-T

163G-port compact modular managed Ethernet switches

FCX619

NPNSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *2WPOWERDISSIPATION *6APEAKPULSECURRENT *EXCELLENThFECHARACTERISTICSUPTO6Amps *EXTREMELYLOWSATURATIONVOLTAGEe.g.13mVtyp. *EXTREMELYLOWEQUIVALENTON-RESISTANCE; *RCE(sat)87mΩat2.75A COMPLIMENTARYTYPE-FCX720 PARTMARKINGDETAIL-619

FCX619

SOT89NPNSILICONPOWER(SWITCHING)TRANSISTOR

FCX619

NPNSiliconPowerSwitchingTransistor

Features ●2Wpowerdissipation. ●6Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto6amps. ●ExtremelylowsaturationvoltageE.g.13mvTyp. ●Extremelylowequivalenton-resistance. RCE(sat)87mΩat2.75A.

FCX619

SOT89NPNSILICONPOWER

Features •BVCEO>50V •IC=3AHighContinuousCollectorCurrent •ICMupto6APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

FCX619TA

50VNPNLOWSATURATIONPOWERTRANSISTORINSOT89

FMMT619

SOT23NPNSILICONPOWER

Features •BVCEO>15V •IC=3AhighContinuousCollectorCurrent •ICM=12APeakPulseCurrent •RCE(sat)=50mΩforalowequivalentOn-Resistance •625mWPowerdissipation •hFEspecifiedupto12Aforhighcurrentgainholdup •ComplementaryPNPType:FMMT717 •TotallyLead-Free&am

FMMT619

NPNSILICONPOWER(SWITCHING)TRANSISTORS

FEATURES *625mWPOWERDISSIPATION *ICCONT3A *12APeakPulseCurrent *ExcellentHFECharacteristicsUpTo12A(pulsed) *ExtremelyLowSaturationVoltageE.g.8mVTyp. *ExtremelyLowEquivalentOnResistance;RCE(sat)

FMMT619

NPNTransistors

■Features ●CollectorCurrentCapabilityIC=2A ●CollectorEmitterVoltageVCEO=50V ●ComplementarytoFMMT720

FMMT619QTA

50VNPNSILICONLOWSATURATIONTRANSISTORINSOT23

Features •BVCEO>50V •IC=2AContinuousCollectorCurrent •625mWpowerdissipation •LowSaturationVoltageVCE(sat)