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EDI8L32512C

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

文件:109.97 Kbytes 页数:8 Pages

WEDC

EDI8L32512C12AC

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

文件:109.97 Kbytes 页数:8 Pages

WEDC

EDI8L32512C15AC

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

文件:109.97 Kbytes 页数:8 Pages

WEDC

EDI8L32512C15AI

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

文件:109.97 Kbytes 页数:8 Pages

WEDC

EDI8L32512C17AC

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

文件:109.97 Kbytes 页数:8 Pages

WEDC

EDI8L32512C17AI

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

文件:109.97 Kbytes 页数:8 Pages

WEDC

EDI8L32512C20AC

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

文件:109.97 Kbytes 页数:8 Pages

WEDC

EDI8L32512C20AI

512Kx32 CMOS High Speed Static RAM

DESCRIPTION The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply voltage and control lines make the divice ideal for creating fl oating point DSP me

文件:109.97 Kbytes 页数:8 Pages

WEDC

EDI8L32512C

512K X 32 CMOS HIGH SPEED STATIC RAM

White Electronic Designs

EDI8L32512C12AC

12ns; 5V power supply; 512K x 32 CMOS high speed static RAM

White Electronic Designs

详细参数

  • 型号:

    EDI8L32512C

  • 制造商:

    Microsemi Corporation

  • 功能描述:

    EDI8L32512C12AI - Bulk

供应商型号品牌批号封装库存备注价格
WEDC
23+
PLCC
8560
受权代理!全新原装现货特价热卖!
询价
EDI
25+23+
68PLCC
23725
绝对原装正品全新进口深圳现货
询价
WEDC
24+
NA
200
进口原装正品优势供应
询价
Microsemi/美高森美
13+
NA
100
终端备货原装现货-军工器件供应商
询价
WEDC
三年内
1983
只做原装正品
询价
MICROSEMI
638
原装正品
询价
MPS/美国芯源
23+
QFN20
69820
终端可以免费供样,支持BOM配单!
询价
WEDC
25+
PLCC
30000
代理全新原装现货,价格优势
询价
MSC
2447
20
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
IDT
CDIP
3647
莱克讯每片来自原厂!价格超越代理!只做进口原装!
询价
更多EDI8L32512C供应商 更新时间2025-12-19 14:02:00