丝印：EDE；Package：SMC；5000 W TVS in SMC

Features • Peak pulse power: – 5000 W (10/1000 μs) – up to 48 kW (8/20 μs) • Stand-off voltage range from 5 V to 100 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C • Operating Tj max: 175 °C • JEDEC registered package outline • Resin meets UL94, V0 • Lead finishing: matte

文件：484.31 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：EDEY；Package：SMA；Automotive 5000 W TVS in SMC

Features • AEC-Q101 qualified • Peak pulse power: – 5000 W (10/1000 μs) – up to 48 kW (8/20 μs) • Stand-off voltage range from 5 V to 100 V • Unidirectional and bidirectional types • Low leakage current: 0.2 μA at 25 °C • Operating Tj max: 175 °C • JEDEC registered package outline • Lead

文件：1.88727 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：EDEY；Package：SMA；Automotive 5000 W TVS in SMC

Features • AEC-Q101 qualified • Peak pulse power: – 5000 W (10/1000 μs) – up to 48 kW (8/20 μs) • Stand-off voltage range from 5 V to 100 V • Unidirectional and bidirectional types • Low leakage current: 0.2 μA at 25 °C • Operating Tj max: 175 °C • JEDEC registered package outline • Lead

文件：1.88727 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (µBGA) package. Features • Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 页数：65 Pages

ELPIDA

美光科技

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (µBGA) package. Features • Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 页数：65 Pages

ELPIDA

美光科技

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (µBGA) package. Features • Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 页数：65 Pages

ELPIDA

美光科技

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (µBGA) package. Features • Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 页数：65 Pages

ELPIDA

美光科技

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (µBGA) package. Features • Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 页数：65 Pages

ELPIDA

美光科技

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (µBGA) package. Features • Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 页数：65 Pages

ELPIDA

美光科技

1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.

Description The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks. They are packaged in 68-ball FBGA (µBGA) package. Features • Power supply: VDD, VDDQ = 1.8V

文件：697.83 Kbytes 页数：65 Pages

ELPIDA

美光科技