首页 >ED-RS199>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SiliconNPNTransistorLowNoise,HighGainAmplifier Description: TheNTE199isasiliconNPNtransistorinaTO92typepackagedesignedespeciallyforlownoisepreamplifierandsmallsignalindustrialamplifierapplications.Thisdevicefeatureslowcollectorsaturationvoltage,tightbetacontrol,andexcellentlownoisecharacteristics. | NTE NTE Electronics | NTE | ||
THICKFILMROTARYPOTENTIOMETER | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
19SlimPoint-of-CareTerminalwithIP54EnclosureandMulti-touchScreen Features 19LCDdisplaywith16.7Mcolors 6thGenerationIntel®Core™i7/i5/i3/Celeron®processor Trueflatpanelwithmulti-touchprojectivecapacitivetouchscreen FanlessdesignwithfullsystemIP54dustandsplashprotection Isolateddesignprovidesuniqueelectricleakage | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技（中国）有限公司 | ADVANTECH | ||
Smarterscopesforfasterdebug | PICO Pico Technology Ltd. | PICO | ||
EDSYNGMBHEUROPA | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
DualSeriesSwitchingDiode DualSeriesSwitchingDiode Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TRISILTM DESCRIPTION TheSMTPBxxserieshasbeendesignedtoprotecttelecommunicationequipmentagainstlightningandtransientinducedbyACpowerlines. FEATURES BIDIRECTIONALCROWBARPROTECTION. BREAKDOWNVOLTAGERANGE:From62VTo270V. HOLDINGCURRENT:IH=150mAmin REPETITIVEPE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
UnipolarHallSwitch-LowSensitivity GeneralDescription TheSS199isaunipolarHall-effectsensorICfabricatedfromCMOStechnology.Thedeviceintegratesavoltageregulator,Hallsensorwithdynamicoffsetcancellationsystem,smallsignalamplifier,Schmitttriggerandanopen-drainoutputdriver.Withsuitableoutputpullu | SECELECTRONICS SEC Electronics Inc. | SECELECTRONICS |
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