首页 >ECW-F4754HLB>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ECW-F4754HLB | 包装：卷带（TR） 封装/外壳：径向 类别：电容器 薄膜电容器 描述：CAP FILM 0.75UF 3% 400VDC RADIAL | Panasonic Electronic Components Panasonic Electronic Components | Panasonic Electronic Components | |
StripBlockforSnap-inMountingwith4IECApplianceOutletsFandspaceforextracomponent | SCHURTERSchurter Inc. 硕特硕特集团 | SCHURTER | ||
LensRetainerClip | VCC Visual Communications Company | VCC | ||
SiliconZ–Diodes | VishayVishay Siliconix 威世科技 | Vishay | ||
2500WATTS(AC)DC/DCSINGLEOUTPUT Features •SingleOutput •6Ux28TEx306mm •Weight9.0kg | POWERBOX Powerbox manufactures | POWERBOX | ||
ZENERDIODECHIPS •ZENERDIODECHIPS •ALLJUNCTIONSCOMPLETELYPROTECTEDWITHSILICONDIOXIDE •ELECTRICALLYEQUIVALENTTO1N4728ATHRU1N4764A •1WATTCAPABILITYWITHPROPERHEATSINKING •COMPATIBLEWITHALLWIREBONDINGANDDIEATTACHTECHNIQUES,WITHTHEEXCEPTIONOFSOLDERREFLOW | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
1WATTZENERDIODES •1WATTZENERDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated | CDI-DIODE | ||
1.0WZENERDIODE5TOLERANCE DESCRIPTION: TheCENTRALSEMICONDUCTORCLL4728ASeriesSiliconZenerDiodeisahighqualityvoltageregulatorforuseinsurfacemountindustrial,commercial,entertainmentandcomputerapplications. MARKING:CATHODEBAND | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTSILICONZENERDIODE1WATT,3.3THRU100VOLTS DESCRIPTION: TheCENTRALSEMICONDUCTORCLL4728ASeriesSiliconZenerDiodeisahighqualityvoltageregulatorforuseinsurfacemountindustrial,commercial,entertainmentandcomputerapplications. MARKING:CATHODEBAND | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTZENERDIODE Voltage:10-100VoltsPower:1.0Watts FEATURES -Forsurfacemountedapplicationsinordertooptimizeboardspace -Lowprofilepackage -Built-instrainrelief -Glasspassivatedjunction -Lowinductance -TypicalIRlessthan5.0uUAabove11V -Hightemperaturesoldering:260°C/10 | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SURFACEMOUNTZENERDIODE Voltage:10-100VoltsPower:1.0Watts FEATURES -Forsurfacemountedapplicationsinordertooptimizeboardspace -Lowprofilepackage -Built-instrainrelief -Glasspassivatedjunction -Lowinductance -TypicalIRlessthan5.0uUAabove11V -Hightemperaturesoldering:260°C/10 | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDZenerDiode Features -Glasspassivatedchip. -Lowleakage. -Foruseinstabilizingandclippingwithhighpowerrating. -Built-instrainrelief. -Lowinductance. -Highpeakreversepowerdissipation. Mechanicaldata -Case:JEDECDO-214AC,moldedplastic. -Epoxy:UL94V-0rateflameretardant. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDZenerDiode Features -Glasspassivatedchip. -Lowleakage. -Foruseinstabilizingandclippingwithhighpowerrating. -Built-instrainrelief. -Lowinductance. -Highpeakreversepowerdissipation. Mechanicaldata -Case:JEDECDO-214AC,moldedplastic. -Epoxy:UL94V-0rateflameretardant. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDZenerDiode Features -Glasspassivatedchip. -Lowleakage. -Foruseinstabilizingandclippingwithhighpowerrating. -Built-instrainrelief. -Lowinductance. -Highpeakreversepowerdissipation. Mechanicaldata -Case:JEDECDO-214AC,moldedplastic. -Epoxy:UL94V-0rateflameretardant. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDZenerDiode Features -Glasspassivatedchip. -Lowleakage. -Foruseinstabilizingandclippingwithhighpowerrating. -Built-instrainrelief. -Lowinductance. -Highpeakreversepowerdissipation. Mechanicaldata -Case:JEDECDO-214AC,moldedplastic. -Epoxy:UL94V-0rateflameretardant. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDZenerDiode Voltage:3.3to100Volts Power:1.0Watts RoHSDevice Features -Batchprocessdesign,excellentpowerdissipation offersbetterreverseleakagecurrentandthermal resistance. -Standardzenervoltagetolerance±5. -Lowinductance. -Lowprofilepackage. -Built-instrainrelief | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDZenerDiode Voltage:3.3to43VoltsPower:1.0WattsRoHSDeviceHalogenFree Features -Batchprocessdesign,excellentpowerdissipationoffersbetterreverseleakagecurrentandthermalresistance. -Glasspasisivatedchipjunction. -TypicalIRlessthan0.5µAabove11V. -Standardzenervoltagetol | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SurfaceMountZenerDiodes Features SiliconPlanarPowerZenerDiodes Foruseinstabilizingandclippingcircuitswithhigherpowerrating. StandardZenervoltagetoleranceis±10.Addsuffix“A”for±5tolerance. OtherZenervoltagesandtolerancesareavailableuponrequest. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
1WattZenerDiode3.3to100Volts Features •WideVoltageRangeAvailable •GlassPackage •HighTempSoldering:260°Cfor10SecondsAtTerminals •ForSurfaceMountApplications | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
ZENERDIODES POWERDISSIPATION:1.0W FEATURES Siliconplanarpowerzenerdiodes Foruseinstabilizingandclippingcircuitswithhighpowerrating. Standardzenervoltagetoleranceis±10.AddsuffixAfor±5tolerance.otherzenervoltageandtolerancesareavailableuponrequest. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN |
产品属性
- 产品编号：
ECW-F4754HLB
- 制造商：
Panasonic Electronic Components
- 类别：
电容器 > 薄膜电容器
- 系列：
ECW-F(L)
- 包装：
卷带（TR）
- 容差：
±3%
- 额定电压 - DC：
400V
- 介电材料：
聚丙烯（PP），金属化
- 工作温度：
-40°C ~ 105°C
- 安装类型：
通孔
- 封装/外壳：
径向
- 大小 / 尺寸：
0.807" 长 x 0.484" 宽（20.50mm x 12.30mm）
- 高度 - 安装（最大值）：
0.949"（24.10mm）
- 端接：
PC 引脚
- 引线间距：
0.492"（12.50mm）
- 应用：
高频率，开关
- 描述：
CAP FILM 0.75UF 3% 400VDC RADIAL
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASONIC-松下 |
24+25+/26+27+ |
车规-薄膜电容 |
6418 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
PANASONIC/松下 |
2022+ |
DIP |
88000 |
原厂代理 终端免费提供样品 |
询价 | ||
PANASONIC/松下 |
23+ |
DIP |
6800 |
专注配单,只做原装进口现货 |
询价 | ||
PANASONIC/松下 |
23+ |
DIP |
6800 |
专注配单,只做原装进口现货 |
询价 | ||
Panasonic |
20+ |
N/A |
899 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
PANASONIC |
20+ |
电容器 |
2926 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
PAN |
1535+ |
4600 |
询价 | ||||
PANASONIC |
2023+ |
SMD |
4600 |
安罗世纪电子只做原装正品货 |
询价 | ||
新 |
5 |
全新原装 货期两周 |
询价 | ||||
2022+ |
1 |
全新原装 货期两周 |
询价 |
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