ESD321

ESD3211-Channel30kVESDProtectionDiodewithLowCapacitance(pF)in0402andSOD-523Packages

1Features •IEC61000-4-2Level4ESDprotection –±30-kVcontactdischarge –±30-kVairgapdischarge •IEC61000-4-4EFTprotection –80A(5/50ns) •IEC61000-4-5surgeprotection –6A(8/20μs) •IOcapacitance:0.9pF(typical) •DCbreakdownvoltage:4.5V(minimum) •Lowleakag

ESD321DPYR

1-Channel30kVESDProtectionDiodewithLowCapacitance(1pF)in0402Package

ESD321DPYR

ESD3211-Channel30kVESDProtectionDiodewithLowCapacitance(pF)in0402andSOD-523Packages

1Features •IEC61000-4-2Level4ESDprotection –±30-kVcontactdischarge –±30-kVairgapdischarge •IEC61000-4-4EFTprotection –80A(5/50ns) •IEC61000-4-5surgeprotection –6A(8/20μs) •IOcapacitance:0.9pF(typical) •DCbreakdownvoltage:4.5V(minimum) •Lowleakag

ESD321DPYR-TP

1-LineUni-directionalESDDIODE

Features oLowoperatingvoltage:5V «Ultralowcapacitance:0.4pF Ultralowleakage:nAlevel oLowclampingvoltage o—IEC61000-4-2(ESD)immunitytest Airdischarge:+30kV Contactdischarge:+30kV —IEC61000-4-4(EFT)40A(5/50ns) —IEC61000-4-5(Lightning)8A(8/20ps)

ESD321DYAR

ESD3211-Channel30kVESDProtectionDiodewithLowCapacitance(pF)in0402andSOD-523Packages

1Features •IEC61000-4-2Level4ESDprotection –±30-kVcontactdischarge –±30-kVairgapdischarge •IEC61000-4-4EFTprotection –80A(5/50ns) •IEC61000-4-5surgeprotection –6A(8/20μs) •IOcapacitance:0.9pF(typical) •DCbreakdownvoltage:4.5V(minimum) •Lowleakag

FC321SOT

1MHz,60uA,Rail-to-RailI/OCMOSOperationalAmplifiers

FCW321G

Surface-mountedchipLEDdevice

FOX321

3.3V5032SMDStratumIIIHCMOSTCXO/VCTCXOMODEL

FOX321

3.3V5032SMDStratumIIIHCMOSTCXO

FOX321E

3.3V5032SMDStratumIIIHCMOSTCXO