MAX6103EUR-T

Low-Cost,Micropower,Low-Dropout,High-Output-Current,SOT23VoltageReferences

GeneralDescription TheMAX6100–MAX6107arelow-cost,low-dropout(LDO),micropowervoltagereferences.Thesethree-terminalreferencesareavailablewithoutputvoltageoptionsof1.25V,1.8V,2.048V,2.5V,3V,4.096V,4.5V,and5V.Theyfeatureaproprietarycurvature-correctioncircuitandlas

MAX6103EUR-T

Low-Cost,Micropower,Low-Dropout,High-Output-Current,SOT23VoltageReferences

GeneralDescription TheMAX6100–MAX6107arelow-cost,low-dropout(LDO),micropowervoltagereferences.Thesethree-terminalreferencesareavailablewithoutputvoltageoptionsof1.25V,1.8V,2.048V,2.5V,3V,4.096V,4.5V,and5V.Theyfeatureaproprietarycurvature-correctioncircuitandlas

MCH6103

DC/DCConverterApplications

MCH6103

DC/DCConverterApplications

PNP/NPNEpitaxialPlanarSiliconTransistors Features •AdoptionofMBITprocesses. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Ultrasmallpackagefacilitatesminiaturizationinendproducts(mountingheight:0.85mm). •Highallowa

MCH6103

BipolarTransistor(-)50V,(-)1A,LowVCE(sat),(PNP)NPNSingleMCPH6

Features •AdoptionofMBITprocesses •Lowcollector-to-emittersaturationvoltage •Largecurrentcapacity •High-speedswitching •Ultrasmallpackagefacilitatesminiaturizationinendproducts(mountingheight:0.85mm) •Highallowablepowerdissipation Applicaitons •Relaydrivers,l

MCH6103-TL-E

BipolarTransistor

MCH6103-TL-E

BipolarTransistor(-)50V,(-)1A,LowVCE(sat),(PNP)NPNSingleMCPH6

Features •AdoptionofMBITprocesses •Lowcollector-to-emittersaturationvoltage •Largecurrentcapacity •High-speedswitching •Ultrasmallpackagefacilitatesminiaturizationinendproducts(mountingheight:0.85mm) •Highallowablepowerdissipation Applicaitons •Relaydrivers,l

MVP-6103-MXM

ExpandableGPUWorkstationPlatforms

MVP-6103-MXM

ExpandableGPUWorkstationPlatforms

OM6103ST

POWERMOSFETINHERMETICISOLATEDJEDECTO257AAPACKAGE