KTD1302

EPITAXIALPLANARNPNTRANSISTOR(AUDIOMUTING)

AUDIOMUTINGAPPLICATION. FEATURES •HighEmitter-BaseVoltage:VEBO=12V(Min.). •HighReversehFE:ReversehFE=20(Min.)(VCE=2V,IC=4mA). •LowonResistance:RON=0.6ή(Typ.)(IB=1mA).

KTD1302

TRANSISTOR(NPN)

FEATURES ●SmallFlatPackage ●AudioMutingApplication ●HighEmitter-BaseVoltage

KTD1302

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●SmallFlatPackage ●AudioMutingApplication ●HighEmitter-BaseVoltage

KTD1302

NPNTransistors

■Features ●SmallFlatPackage ●AudioMutingApplication ●HighEmitter-BaseVoltage

KTD1302

SiliconNPNtransistorinaTO-92PlasticPackage

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features LowonResistance:Ron=0.6Ω(Typ.)(IB=1.0mA). Applications Audiomutingapplications.

KTD1302

SOT-89-3LPlastic-EncapsulateTransistors

FEATURES SmallFlatPackage AudioMutingApplication HighEmitter-BaseVoltage

LRS1302

StackedChip8MFlashand1MSRAM

Description TheLRS1302isacombinationmemoryorganizedas1,048,576X8bitflashmemoryand131,072X8bitstaticRAMinpackage. Itisfabricatedusingsilicon-gateCMOSprocesstechnology.

LT1302

MicropowerHighOutputCurrentStep-UpAdjustableandFixed5VDC/DCConverters

LT1302

MicropowerHighOutputCurrentStep-UpAdjustableandFixed5VDC/DCConverters

M1302

6mmHEXFEMALESTANDOFFS